AVS 47th International Symposium
    Semiconductors Friday Sessions
       Session SC+EL-FrM

Paper SC+EL-FrM1
Process Development For Small-Area GaN/AlGaN HBTs

Friday, October 6, 2000, 8:20 am, Room 306

Session: III-Nitride Processing and Devices
Presenter: K.P. Lee, University of Florida
Authors: K.P. Lee, University of Florida
G. Dang, University of Florida
A.P. Zhang, University of Florida
F. Ren, University of Florida
J. Han, Sandia National Laboratories
W.S. Hobson, Lucent Technologies, Bell Laboratories
C.R. Abernathy, University of Florida
S.J. Pearton, University of Florida
J.W. Lee, Plasma Therm
Correspondent: Click to Email
A self-aligned fabrication process for small emitter contact area (2x4 µm@super 2@) GaN/AlGaN heterojunction bipolar transistor is descried. The process features dielectric-spacer sidewalls, low damage dry etching and selected-area regrowth of GaAs(C) on the base contact. The junction I-V characteristics were evaluated at various stages of the process sequence and provided an excellent diagnostic for monitoring the effect of plasma processes such as CVD or etching. A comparison will be given with large emitter-area (2.5x10@super 4@ µm@super 2@) devices fabricated on the same material. The small-area devices are alternative for microwave power switching applications.