| AVS 47th International Symposium | |
| Semiconductors | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SC+EL+SS-WeM1 Infrared Study of the Initial Stages of Etching of Si Electrode Surfaces in HF Solution Y. Kimura, Y. Kondo, J. Nemoto, M. Niwano, Tohoku University, Japan |
| 8:40am | SC+EL+SS-WeM2 Electrical Transport at Chemically Modified Silicon Surfaces O. Hul'ko, R. Boukherroub, C. Mark, S.N. Patitsas, H.Z. Yu, G.P. Lopinski, National Research Council Canada |
| 9:00am | SC+EL+SS-WeM3 Using Micromachined Test Patterns to Study Surface Chemistry: An Investigation of Etchant Anisotrophy M.A. Hines, R.A. Wind, Cornell University |
| 9:20am | SC+EL+SS-WeM4 Etching of BPSG Films Using Anhydrous HF A. Thorsness, G. Montano, A. Muscat, University of Arizona |
| 9:40am | SC+EL+SS-WeM5 Etching of Polymer-like a-Si:H Films by Impact of H T. Zecho, B. Brandner, Universitaet Bayreuth, Germany, J. Biener, J. Kueppers, Max-Planck-Institut fuer Plasmaphysik (EURATOM Association), Germany |
| 10:00am | SC+EL+SS-WeM6 Reaction Mechanism of Si(100) Etching by Mass- and Energy-Selected Cl+ Beams S.M. Lee, M. Lu, J.W. Rabalais, University of Houston |
| 10:20am | SC+EL+SS-WeM7 Deuterium Etching of the Si-rich SiC(0001)-(3x3) Surface Reconstruction C.R. Stoldt, C. Carraro, R. Maboudian, University of California, Berkeley |
| 10:40am | SC+EL+SS-WeM8 Variable Temperature Study of Hydrogen and Deuterium Passivation of the Si(100)-2x1 Surface using the Scanning Tunneling Microscope M.C. Hersam, N.P. Guisinger, K. Cheng, J. Lee, J.W. Lyding, University of Illinois |