AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeM

Paper SC+EL+SS-WeM7
Deuterium Etching of the Si-rich SiC(0001)-(3x3) Surface Reconstruction

Wednesday, October 4, 2000, 10:20 am, Room 306

Session: Passivation and Etching of Semiconductors
Presenter: C.R. Stoldt, University of California, Berkeley
Authors: C.R. Stoldt, University of California, Berkeley
C. Carraro, University of California, Berkeley
R. Maboudian, University of California, Berkeley
Correspondent: Click to Email
The low-energy electron (LEED) pattern of the SiC(0001)-(3x3) surface reconstruction undergoes a conversion from (3x3) to (1x1) upon exposure to atomic hydrogen (and deuterium). Using high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, LEED, and temperature programmed desorption, we have determined that this conversion is due to etching and disordering of the uppermost Si layers. With increasing deuterium exposure at 320 K, etching results in depletion of the Si adlayer and formation of SiD surface species. At high deuterium exposure, observation of the C-D stretch mode indicates the onset of bulk silicon carbide etching. SiD@sub 2@ and SiD@sub 3@ surface species, known intermediates in the Si etching process, are observed with deuterium exposure at 180 K.