AVS 47th International Symposium | |
Semiconductors | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | SC+EL+SS-MoA1 Adsorption of SiH@sub 4@ on Si(001)(2x1) Investigated by Infrared Spectroscopy M. Shinohara, A. Seyama, Y. Kimura, M. Niwano, Tohoku University, Japan |
2:20pm | SC+EL+SS-MoA2 Si(001):As Gas-source Molecular Beam Epitaxy: As Incorporation and Film Growth Kinetics H. Kim, University of Illinois, G. Glass, PTD, Intel Corp., J.A.N.T. Soares, University of Illinois, P. Desjardins, Ecole Polytechnique de Montreal, J.E. Greene, University of Illinois |
2:40pm | SC+EL+SS-MoA3 Scanning Tunneling Microscopy of Impurity Dimers on Hydrogen-Terminated Si(100)-2x1 Surface S. Matsuura, University of Tokyo, Japan, M. Fujimori, S. Heike, Y. Suwa, H. Kajiyama, T. Onogi, Hitachi, Ltd., Japan, K. Kitazawa, University of Tokyo, Japan, T. Hashizume, Hitachi, Ltd., Japan |
3:00pm | SC+EL+SS-MoA4 Adsorption and Reaction of Fluorinated Fullerenes on Silicon Y. Fujikawa, J.T. Sadowski, Tohoku University, Japan, K.F. Kelly, Pennsylvania State University, K.S. Nakayama, T. Sakurai, Tohoku University, Japan |
3:20pm | SC+EL+SS-MoA5 STM Study of Self-Assembled Quantum-Dot Arrays of Sn on Si(111)-(7x7) Surface M. Yoon, R.F. Willis, The Pennsylvania State University |
3:40pm | SC+EL+SS-MoA6 Evolution of Surface Morphology During Sb Growth on Ge(100) L.H. Chan, E.I. Altman, Yale University |
4:00pm | SC+EL+SS-MoA7 Effects of Exposure on GaSe Passivated Si(111) J.A. Adams, A. Bostwick, S. Meng, B.R. Schroeder, M.A. Olmstead, F.S. Ohuchi, University of Washington |
4:20pm | SC+EL+SS-MoA8 Temporal Changes of Photoemission Spectra of the Alkali-metal-induced Ge(111) 3x1 Surface G. Lee, C. Hwang, Y. Park, S. Cho, H. Lee, Korea Research Institute of Standards and Science, E. Cho, Chonnam National University, Korea |
4:40pm | SC+EL+SS-MoA9 Role of Excited Electronic States in Reactions on Si(100) J.S. Hess, D.J. Doren, University of Delaware |
5:00pm | SC+EL+SS-MoA10 Dynamics of Photo-induced Reaction on a Chlorinated Si(111) Surface S. Haraichi, F. Sasaki, Electrotechnical Laboratory, Japan |