AVS 47th International Symposium
    Semiconductors Monday Sessions
       Session SC+EL+SS-MoA

Paper SC+EL+SS-MoA1
Adsorption of SiH@sub 4@ on Si(001)(2x1) Investigated by Infrared Spectroscopy

Monday, October 2, 2000, 2:00 pm, Room 306

Session: Reactions on Semiconductors
Presenter: M. Shinohara, Tohoku University, Japan
Authors: M. Shinohara, Tohoku University, Japan
A. Seyama, Tohoku University, Japan
Y. Kimura, Tohoku University, Japan
M. Niwano, Tohoku University, Japan
Correspondent: Click to Email

Adsorption of silane molecules, SiH@sub 4@ and Si@sub 2@H@sub 6@, onto Si(001) has so far been investigated extensively, because of the potential of using the silane molecules as the source gas for gas source molecular beam epitaxy (GS-MBE) for the growth of Si. Previous studies on Si deposition using silanes have suggested that during the course of Si crystal growth, silanes dissociatively adsorb on Si surface dangling bonds as trihydride (SiH@sub 3@) and dihydride (SiH@sub 2@) species and then decomposes to surface monohydride species, SiH. However, there has been only a little amount of information about the type of hydride species that are generated during the adsorption of silane on Si surfaces. In this study, we used infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR) to investigate the adsorption of SiH4 on the Si(001)(2x1) surface. IRAS-MIR provides us with valuable information about the hydrogen bonding configurations on semiconductor surfaces. Comparing infrared data with the density functional cluster calculation, we show that the silane molecule dissociatively adsorbs on Si(001)(2x1) to populate a dihydride (SiH@sub 2@) at the bridge site between two adjacent dimers and a monohydride species; the latter is formed by terminating the unsaturated dangling bonds of dimers by hydrogen atoms that are released from the silane molecule. We found that at high surface hydrogen coverage, surface silyl (-SiH@sub 3@) group and monohydride (SiH) species are generated. We interpret that at high hydrogen coverage, silane adsorbs onto a single dimer that has two unsaturated dangling bonds on which a hydrogen atom and a sylil group (-SiH@sub 3@) stick. We also show that a dihydride species that was initially generated by silane adsorption, dissociates even at room temperature and the released hydrogen atoms migrate on the surface to produce more monohydride species.