AVS 47th International Symposium
    Semiconductors Monday Sessions
       Session SC+EL+SS-MoA

Paper SC+EL+SS-MoA4
Adsorption and Reaction of Fluorinated Fullerenes on Silicon

Monday, October 2, 2000, 3:00 pm, Room 306

Session: Reactions on Semiconductors
Presenter: Y. Fujikawa, Tohoku University, Japan
Authors: Y. Fujikawa, Tohoku University, Japan
J.T. Sadowski, Tohoku University, Japan
K.F. Kelly, Pennsylvania State University
K.S. Nakayama, Tohoku University, Japan
T. Sakurai, Tohoku University, Japan
Correspondent: Click to Email
The adsorption structure of fluorinated fullerene molecules deposited on silicon was studied using scanning tunneling microscopy (STM) and high-resolution electron energy loss spectroscopy (HREELS). The results of HREELS indicated that the fluorine atoms around the molecules were detached from the molecules and chemisorbed to the surface. These fluorine adsorption sites were directly observed around the adsorbed molecules in the STM images. Some of the fluorine-adsorbed sites were found to form thread-like structures, suggesting that the molecules print the fluorine atoms on the terrace due to the rolling movement of the molecules. Annealing produced different degrees of defluorination of the fullerenes and etching of the silicon surface depending on the temperature. By imaging the intermolecular structure of the molecules with the STM, we can directly observe the loss of the fluorine atoms.