| AVS 47th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-ThA1 Ion Energy Control for Enhanced Plasma Etch Selectivity Y. Andrew, E. Ko, J. Machima, S.-B. Wang, A.E. Wendt, University of Wisconsin, Madison |
| 2:20pm | PS2-ThA2 Temperature and Bias Effects in ICP Etching of Silicon Dioxide M.J. Cooke, G. Hassall, Oxford Instruments Plasma Technology Ltd., UK |
| 2:40pm | PS2-ThA3 Control of Incident Fluxes and Surface Reactions in the Etching of Dielectric Materials T. Tatsumi, M. Matsui, K. Kinoshita, S. Kobayashi, M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 3:00pm | PS2-ThA4 Reaction Mechanisms and SiO@sub 2@ Profile Evolution in Fluorocarbon Plasmas: Bowing and Tapering@footnote 1@ D. Zhang, University of Illinois at Urbana-Champaign, C. Cui, Applied Materials, Inc., M.J. Kushner, University of Illinois at Urbana-Champaign |
| 3:20pm | PS2-ThA5 Etching Mechanism of Silicon Nitride Film in Self-aligned Contact Etching Process M. Ito, S. Senda, K. Kamiya, M. Hori, T. Goto, Nagoya University, Japan |
| 3:40pm | PS2-ThA6 Invited Paper High-performance Silicon Dioxide Etching for High-aspect Contact Holes S. Samukawa, NEC Corp. |
| 4:20pm | PS2-ThA8 Selective Etching of SiO@sub 2@ in High Density Fluorocarbon Plasmas for Applications in Micro-systems F. Gaboriau, M.-C. Peignon, G. Turban, Ch. Cardinaud, CNRS-University of Nantes, France |
| 5:00pm | PS2-ThA10 Trench Etch Processes for Dual Damascene Patterning of Low-k Dielectrics P. Jiang, F.G. Celii, W.W. Dostalik, K.J. Newton, Texas Instruments, Inc., H. Sakima, Tokyo Electron America |