| AVS 47th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1+TF+SE-ThM1 Analysis of Pulsed O@sub 2@/TEOS Helicon Plasmas by Time-resolved Optical Spectroscopy A. Granier, Institut des Materiaux de Nantes, France, A. Rousseau, Laboratoire de Physique des Gaz et des Plasmas, France, L. Le Brizoual, Institut des Materiaux de Nantes, France |
| 8:40am | PS1+TF+SE-ThM2 Aluminum Oxide Deposition in an Ionized PVD System N. Li, D.N. Ruzic, University of Illinios, Urbana-Champaign, A. Paranjpe, CVC Inc., J.E. Norman, J.P. Allain, University of Illinios, Urbana-Champaign |
| 9:00am | PS1+TF+SE-ThM3 Surface Transport Kinetics in Plasma Deposition of Hydrogenated Amorphous Silicon K.R. Bray, A. Gupta, G.N. Parsons, North Carolina State University |
| 9:20am | PS1+TF+SE-ThM4 Hydrogenated Amorphous Silicon Fractal Growth and its Relation to the Growth Mechanism A.H.M. Smets, D.C. Schram, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
| 9:40am | PS1+TF+SE-ThM5 Interactions of Chemically Reactive Radicals with Si Growth Surfaces during Plasma Deposition of Si Thin Films S. Sriraman, S. Ramalingam, E.S. Aydil, D. Maroudas, University of California, Santa Barbara |
| 10:00am | PS1+TF+SE-ThM6 SiH@sub x@ Radical Densities in a Remote SiH@sub 4@ Plasma for High Rate Deposition of a-Si:H W.M.M. Kessels, J.P.M. Hoefnagels, M.G.H. Boogaarts, D.C. Schram, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
| 10:20am | PS1+TF+SE-ThM7 Invited Paper Fundamentals of Plasma Enhanced Chemical Vapor Deposition J. Meichsner, Ernst-Moritz-Arndt-University Greifswald, Germany |
| 11:00am | PS1+TF+SE-ThM9 Thin Film Growth via Surface Reactions of CH@sub 3@, C@sub 2@H@sub 2@ and H as Investigated by Radical Beam Experiments M. Meier, A. von Keudell, Max-Planck-Institut für Plasmaphysik, Germany |
| 11:20am | PS1+TF+SE-ThM10 Deposition Kinetics in Methane rf Glow Discharges: A Combined Experimental and Modeling Study J.R. Doyle, D. Cole, B. Magocsi, Macalester College |
| 11:40am | PS1+TF+SE-ThM11 Using Plasma Energetics to Influence Silicon Nitride Step Coverage K.L. Seaward, Agilent Technologies, M.L. Jezl, University of Wisconsin, Madison |