| 8:20am |
PS-MoM1 Invited Paper
Plasma-Assisted Etching Processes for Dielectric Materials: Technological Challenges and Elementary Processes on Planar Surfaces and in Microstructures
G.S. Oehrlein, University of Maryland |
| 9:00am |
PS-MoM3
Observation of Surface Reaction Layers formed in Highly Selective SiO@sub 2@ Etch Process
M. Matsui, T. Tatsumi, M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 9:20am |
PS-MoM4
Early-stage Modification of SiO@sub 2@ Surface in Fluorocarbon Plasma for Selective Etching Over Si
K. Ishikawa, M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 9:40am |
PS-MoM5
Silicon Etch Yields and Etching Chemistry in F@sub 2@, Cl@sub 2@, Br@sub 2@, and HBr High Density Plasmas
S.A. Vitale, H.H. Sawin, Massachusetts Institute of Technology |
| 10:00am |
PS-MoM6
Studies on SiF@sub x@ Radicals in Fluorosilane Plasmas Used for Silicon Etching and Deposition
K.L. Williams, E.R. Fisher, Colorado State University |
| 10:20am |
PS-MoM7
Ion Energy Distributions at the RF-Biased Electrode in an Inductively-Driven Discharge
I.C. Abraham, J.R. Woodworth, M.E. Riley, P.A. Miller, Sandia National Laboratories |
| 10:40am |
PS-MoM8
The Influence of High Density Plasma on TiN Films Deposited by Ionized Physical Vapor Deposition
D. Mao, J.A. Hopwood, K. Tao, Northeastern University |