| AVS 47th International Symposium | |
| Material Characterization | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | MC-MoM1 Valence Model Based Correction of Ultra Shallow Depth Profiles O. Brox, University of Muenster, Germany, D. Gehre, E. Zschech, AMD Saxony Manufacturing GmbH, Germany, A. Benninghoven, University of Muenster, Germany |
| 8:40am | MC-MoM2 Analysis of Ultra-thin Oxynitride Layers by TOF-SIMS E. Niehuis, T. Grehl, R. Möllers, ION-TOF GmbH, Germany, O. Brox, University of Münster, Germany |
| 9:00am | MC-MoM3 Invited Paper Ion Beam Studies of Ultrathin Metal Oxide Dielectrics E. Garfunkel, B. Busch, H. Schulte, T. Gustafsson, Rutgers University |
| 9:40am | MC-MoM5 Matching the High Dose Ultra Shallow As Doping Profiles Measured by X-ray Photoelectron Spectroscopy, Magnetic Sector Secondary Ion Mass Spectrometry and Low Energy Quadrupole Secondary Ion Mass Spectrometry J. Zhao, C.M. Jones, T. Neil, Advanced Micro Devices, D. Zhou, University of Central Florida |
| 10:00am | MC-MoM6 XPS Characterization of NO Oxynitride Films using Chemical Profiling I.S. Choi, H.J. Kim, S.Y. Lee, Hyundai Electronics Industries Co., Ltd., Korea |
| 10:20am | MC-MoM7 The Effect of Ion Acceleration Voltage on Interface Resolution During Depth Profiling and the Application of Advanced Data Analysis Techniques S.J. Hutton, Kratos Analytical, UK, N. Fairley, CASAXPS Ltd, UK, D. Surman, Kratos Analytical, UK |
| 10:40am | MC-MoM8 Quantitative Comparison between AES and SIMS Depth Profiles of a Double Layer Structure of AlAs in GaAs Using the MRI-model S. Hofmann, Max-Planck-Institute for Metals Research, Germany, A. Rar, University of Alabama, D.W. Moon, Korea Research Institute of Standards and Science, K. Yoshihara, National Research Institute for Metals, Japan |