AVS 47th International Symposium
    Material Characterization Monday Sessions
       Session MC-MoM

Paper MC-MoM8
Quantitative Comparison between AES and SIMS Depth Profiles of a Double Layer Structure of AlAs in GaAs Using the MRI-model

Monday, October 2, 2000, 10:40 am, Room 207

Session: Depth Profiling
Presenter: S. Hofmann, Max-Planck-Institute for Metals Research, Germany
Authors: S. Hofmann, Max-Planck-Institute for Metals Research, Germany
A. Rar, University of Alabama
D.W. Moon, Korea Research Institute of Standards and Science
K. Yoshihara, National Research Institute for Metals, Japan
Correspondent: Click to Email
Application of the so called mxing-roughness-information depth (MRI)-model@footnote 1@ to the quantitative reconstruction of the in-depth distribution of composition, is demonstrated by a comparison of SIMS and AES depth profiles. A GaAs/AlAs reference sample consisting of two layers of AlAs (1 ML and 36 ML) separated by 44 ML of a GaAs matrix was depth profiled using almost identical sputtering conditions: Ar+ ions of 3 keV impact energy and 52 (SIMS: CAMECA 4f) and 58 deg. (AES: VG Microlab 310F) incidence angles. Both the Al+ intensity of the SIMS profile and the Al (LVV) intensity of the AES profile were quantified by fitting the measured profiles with those calculated with the MRI model, resulting in the same mixing length of 3.0 nm ± 0.3 nm, similar roughness parameter (1.4-2 nm), and negligibly small information depth (0.4 nm)for SIMS. Whereas practically no matrix effect was observed for Al+ in the SIMS profile, quantification using dimer ions (Al2+) shows a marked nonlinearity between concentration and intensity.@footnote 2@ @FootnoteText@@footnote 1@S. Hofmann, Surf. Interface Anal. 27,(1999)825. @footnote 2@A. Rar, D.W. Moon and S. Hofmann, J. Surf. Anal. 6,(1999)29.