AVS 47th International Symposium
    Material Characterization Monday Sessions
       Session MC-MoM

Invited Paper MC-MoM3
Ion Beam Studies of Ultrathin Metal Oxide Dielectrics

Monday, October 2, 2000, 9:00 am, Room 207

Session: Depth Profiling
Presenter: E. Garfunkel, Rutgers University
Authors: E. Garfunkel, Rutgers University
B. Busch, Rutgers University
H. Schulte, Rutgers University
T. Gustafsson, Rutgers University
Correspondent: Click to Email
There is a strong need to find silicon-compatible high dielectric constant (high-K) replacements for silicon dioxide in microelectronics. This presentation describes recent results on the structure, composition, growth and annealing behavior of high-K combinations of Zr, Hf, Y, and La oxide films. Results will be presented from ion scattering, scanning probe microscopy, photoelectron spectroscopy, electron microscopy and several other surface and thin film methods. It is found that only by cross-correlating several different methods can a definitive analysis of structure and composition (including the depth profile) be given. The interaction of isotopically labeled oxygen with ultrathin oxides at elevated temperatures shows oxygen exchange and diffusion in the films, as well as deleterious silicon dioxide interface growth (that unfortunately accompanies many post-growth anneals). Problems associated with crystallization, interdiffusion, electrical breakdown, and interface structure will also be addressed.