| AVS 47th International Symposium | |
| Electronics | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EL-TuP1 Polarization Effect on Copper Electroplating in Presence of Thiourea Additives C.-L. Cheng, Y.-S. Lin, Chung-Yuan University, Taiwan |
| EL-TuP2 Low Temperature, Single-Source CVD of ZrB2 and HfB2 Films as Cu Diffusion Barriers and Interconnects in Next-Generation ULSI J.H. Sung, D.M. Goedde, G.S. Girolami, J.R. Abelson, University of Illinois at Urbana-Champaign |
| EL-TuP3 Study of Electrical and Interfacial Properties of CVD-W/n-Si@sub 0.83@Ge@sub 0.17@/Si(001) Schottky Contacts Y.C. Jang, K.S. Kim, D.O. Shin, Sungkyunkwan University, South Korea, K.-H. Shim, Electronics and Telecommunications Research Institute, South Korea, S. Youn, K. Roh, Y. Roh, N.-E. Lee, Sungkyunkwan University, South Korea |
| EL-TuP4 Work Function and Barrier Height Correlation for Al/GaAs Schottky Contacts Modified by Ultra-Thin, Doped Si and Ge Interlayers T.A.R. Müller, M.I. Nathan, University of Minnesota, A. Franciosi, University of Minnesota and Universita' di Trieste, C.J. Palmstrom, University of Minnesota |
| EL-TuP5 Enhancement of Mobility with Double Delta-doped Quantum Wires by Focused Ion Beam S. Choi, M. Leung, G. Stupian, N. Presser, The Aerospace Corporation, C. Lee, Honam University, Korea |
| EL-TuP6 Implantation of AlAs Etch-Stop Layers by MBE for Recessed Gate P-HEMTs G. Zhou, W. Liu, M. Lin, Alpha Industries, Inc. |
| EL-TuP7 Early Growth Studies of Barium Magnesium Fluoride onto (111)-oriented Silicon Substrates A. Martinez, W. Gomez, M. Rodriguez, University of Puerto Rico |
| EL-TuP8 Fabrication of Smooth Diamond Films on SiO2 by the Addition of Nitrogen to the Gas Feed in Hot-filament CVD V. Baranauskas, A.C. Peterlevitz, Z. Jingguo, S.F. Durrant, Universidade Estadual de Campinas, Brazil |
| EL-TuP9 Nanocrystalline Diamond and Nano-carbon Structures Produced using a High Argon Concentration in Hot-filament CVD V. Baranauskas, A.C. Peterlevitz, H.J. Ceragioli, S.F. Durrant, Universidade Estadual de Campinas, Brazil |
| EL-TuP10 Bonding Chemistry of Alternative Gate Dielectrics: Is there Really an Alternative Gate Dielectric that can Meet SIA Roadmap Expectations for Performance, Reliability and Process Integration? G. Lucovsky, North Carolina State University |
| EL-TuP11 Electrical Properties of (Ba,Sr)TiO@sub 3@ Capacitors by Inductively Coupled Plasma Etching S.-K. Choi, N.-H. Kim, E.-G. Chang, Chungang University, Korea, T.-H. Kim, YIT, Korea, C.-I. Kim, Chungang University, Korea |
| EL-TuP12 (1-x)SrTiO@sub 3@-xPbTiO@sub 3@ Thin Films Grown by RF Sputtering on Pt/TiN@sub X@ AND RuO/TiN@sub X@ Electrodes E.M. Guerra, CICESE, Mexico, A.F. Cruz, IMRE, Mexico, J.S. Beltrones, UNAM, Mexico |
| EL-TuP13 Etching Mechanism of Y@sub 2@O@sub 3@ Thin Flims in Cl@sub 2@/Ar Plasma Y.C. Kim, B.J. Min, Chungang University, Korea, Y.T. Kim, KIST, Korea, C.-I. Kim, Chungang University, Korea |
| EL-TuP14 Etch Characteristics of CeO@sub 2@ Thin Films as a Buffer Layer for the Applications of MFIS-FeRAM C.-S. Oh, Chungang University, Korea, K.-H. Kwon, Hanseo University, Korea, T.-H. Kim, YIT, Korea, C.-I. Kim, Chungang University, Korea |
| EL-TuP15 The Interface Formation of Ta and Low-k Plasma-polymerized Para-xylene (PPpX) and Cyclohexane (PPCHex) and the Diffusion Properties K.J. Kim, K.S. Kim, Y.C. Jang, G.Y. Yeom, N.-E. Lee, Y.C. Quan, J. Choi, C.Y. Park, D.-Y. Jung, Sungkyunkwan University, South Korea |
| EL-TuP16 Structure Effects of Pendant Groups on Dielectric Constant and Thermal Properties of Polyimides L.-Y. Wang, National Taiwan University, P. Chang, C.-L. Cheng, Chung-Yuan University, Taiwan |