AVS 47th International Symposium
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP7
Early Growth Studies of Barium Magnesium Fluoride onto (111)-oriented Silicon Substrates

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: W. Gomez, University of Puerto Rico
Authors: A. Martinez, University of Puerto Rico
W. Gomez, University of Puerto Rico
M. Rodriguez, University of Puerto Rico
Correspondent: Click to Email
We have grown barium magnesium fluoride films (BMF) onto (111)-oriented silicon substrates using molecular beam epitaxy. The early stages of growth were studied through the performance of X-ray photoelectron spectroscopy measurements on interrupted growth runs without exposing films to atmosphere. It was observed that exposure of the Si substrate to the BMF vapor at a substrate temperature of 950C for periods of 10 seconds, removed the native oxide layer from the substrate. Subsequent growth onto substrates pretreated in this way resulted in highly textured (020)-oriented BMF films, as evidenced by x-ray diffraction studies. Films grown without the pretreatment did not display this high degree of texture.