AVS 47th International Symposium
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP12
(1-x)SrTiO@sub 3@-xPbTiO@sub 3@ Thin Films Grown by RF Sputtering on Pt/TiN@sub X@ AND RuO/TiN@sub X@ Electrodes

Tuesday, October 3, 2000, 5:30 pm, Room Exhibit Hall C & D

Session: Poster Session
Presenter: E.M. Guerra, CICESE, Mexico
Authors: E.M. Guerra, CICESE, Mexico
A.F. Cruz, IMRE, Mexico
J.S. Beltrones, UNAM, Mexico
Correspondent: Click to Email
(1-x)SrTiO@sub3@(ST)-xPbTiO@sub 3@(PT)polycrystalline thin films were deposited at different temperatures and pressures by argon ion rf sputtering on Pt/TiN@sub x@/SiO@sub 2@/Si and RuO/TiN@sub x@/SiO@sub 2@/Si substrates in presence of different concentration of Oxygen. The polycrystalline (ST-PT) perovskite phase formation is confirmed by x-ray diffraction (XRD) analysis and the grain growth dynamics is studied by scanning electron microscopy (SEM). The nature of the ferroelectric layer-electrode interface is analyzed by transmission electron microscopy (TEM) as well as the effect of its characteristics in the performance of the multilayer system. The dielectric properties of the ST-PT thin films were characterized through P-E hysteresis measurements. The microstructural results obtained for the (1-x)SrTiO@sub 3@-xPbTiO@sub 3@ films on Pt/TiN@sub x@/SiO@sub 2@/Si and RuO/TiN@sub x@/SiO@sub 2@/Si substrates were correlated to the ferroelectric properties.