AVS 47th International Symposium
    Manufacturing Science and Technology Monday Sessions
       Session MS-MoM

Paper MS-MoM2
Three Dimensional Reconstruction Metrology by Combinatory Multiple Parameter Characterization and Scanning Probe Microscopy

Monday, October 2, 2000, 8:40 am, Room 304

Session: Metrology for IC Manufacturing
Presenter: E.C. Houge, Lucent Technologies and University of Central Florida
Authors: E.C. Houge, Lucent Technologies and University of Central Florida
J.M. McIntosh, Bell Laboratories
J.E. Griffith, Bell Laboratories
L.A. Giannuzzi, University of Central Florida
J.B. Bindell, Lucent Technologies
Correspondent: Click to Email
Critical dimension metrology of integrated circuits has historically constituted only single parameter characterization of SEM intensity line profiles, which was intended to be representative of the overall linewidth. Due to the surjective nature of the intensity line profile, different morphological patterns can be represented by a single parameter thus causing the inability to delineate deviant morphologies. As the linewidths continue to decrease smaller variations begin to have significant impact in the overall morphology of the linewidth and the pattern transfer function. Three dimensional reconstruction metrology leverages the advantageous of two next generation inline metrology techniques, multiple parameter characterization and scanning probe microscopy, to create a new methodology of metrology. Multiple parameter characterization of scanning electron microscope intensity line profiles initially has shown promise of being able to distinguish deviations from nominal profiles in the characterization and evaluation against preset process margin templates stored in memory. Inline scanning probe microscopy presents the ability to do morphological shape evaluation by nondestructive cross sectioning of critical dimension features obtaining topographic z(x,y) mapping as a function of planar positioning of the scan system. Through the use of these two techniques along with transform reconstruction, a three dimensional topography of the sample surface can be reconstructed utilizing only two dimensional intensity and topographic mapping of the sample surface. Single parameter characterization is then replaced by the determination of Scale (nm), Shape Quality (A weighted polynomial of process margin template deviation, 0-1), and Deviation Bin (A descriptor for type of deviation, A-Z). This segregation of shape and scale along with the full characterization of the feature morphology presents the possibility for the feedback and feedforward use of metrology.