AVS 47th International Symposium
    Manufacturing Science and Technology Monday Sessions
       Session MS-MoA

Invited Paper MS-MoA7
Technology for Wired and Wireless Networks

Monday, October 2, 2000, 4:00 pm, Room 304

Session: Challenges in Semiconductor Manufacturing for the First Decade of the 21st Century
Presenter: S. Subbanna, IBM Microelectronics
Authors: S. Subbanna, IBM Microelectronics
B. Meyerson, IBM Microelectronics
Correspondent: Click to Email
In the first decade of this century, we can expect to see extraordinary growth in the availability of information bandwidth. Telecommunications providers and/or service providers will be expanding their capacity to provide increasing numbers and types of services at an ever cheaper rate. This will drive demand for high-speed wired and wireless ICs, and for the seamless connection of both. This talk will focus on the silicon-based process technology, packaging, and design infrastructure requirements for rapid development and supply of cost-effective solutions. In particular the manufacturing advantages of using a silicon (CMOS) base for this technology will be expounded. One technology that unites the cost-effective CMOS base with a high-performance RF NPN bipolar transistor is Silicon-germanium (SiGe) BICMOS. SiGe BICMOS has been used to combine many different RF and digital functions on a single chip. The drive for RF system-on-a-chip is great due to requirements of power, space, and weight reduction for cellular phones. We will discuss design of the SiGe BICMOS technology for manufacturability, as well as issues associated with bringing our 0.5, 0.25, and 0.18um technologies to production. The issues associated with use of CMOS technologies for RF applications will also be discussed, as well as tooling implications and requirements (which are slightly different than CMOS). The issues associated with simulation of (semiconductor) processes and device performance for SiGe BICMOS will also be discussed. We will also discuss challenges for improvement of yield and manufacturability of these technologies. We will also review the limits on silicon technology performance in the light of these new developments.