AVS 47th International Symposium
    Manufacturing Science and Technology Friday Sessions
       Session MS-FrM

Paper MS-FrM3
The Application of In-situ Monitor of Extremely Rarefied Particle-clouds Grown Thermally Above Wafers by using Laser Light Scattering Method to the Development of the Mass-production Conditions of the Tungsten Thermal CVD

Friday, October 6, 2000, 9:00 am, Room 304

Session: Langmuir Award/Ultra Clean Society and Contamination Free Manufacturing
Presenter: N. Ito, NEC Corporation, Japan
Authors: N. Ito, NEC Corporation, Japan
T. Moriya, NEC Corporation, Japan
F. Uesugi, NEC Corporation, Japan
S. Moriya, Tokyo Electron Ltd., Japan
M. Aomori, Tokyo Electron Ltd., Japan
Y. Kato, Tokyo Electron Ltd., Japan
M. Tachibana, Tokyo Electron Yamanashi Ltd., Japan
Correspondent: Click to Email
It is successfully demonstrated that the scattered-light intensity by thermally grown particle-clouds above wafers in the real tungsten (W) CVD chamber has a good correlation both with the surface roughness of the W-CVD film measured by the atomic force microscopy (AFM) and with the raw material gas-flow ratio SiH@sub 4@/WF@sub 6@. In addition, since our in-situ particle monitor above wafers can detect particle-clouds consisting of particles less than 10nm in size, the appearance and the motion of particle-clouds corresponding to the transient variation of the ratio SiH@sub 4@/WF@sub 6@ at the conversion of gases and/or at the change of the flow rate can be observed. On the basis of these results, the mass-production conditions of particle-free and smooth surface of W-films are clarified with short Cycle Time. The traditional ways of developing the mass-production CVD conditions need many monitor-wafers and are time consuming, because both clarification of the suppression conditions of gas-phase particles by the in-situ particle monitor in vacuum exhaust lines and confirmation by the wafer-level visual inspection are indispensable. Moreover, the sensitivities of in-situ particle monitor at an exhaust line and the wafer-level inspection machine become insufficient to develop process conditions, as reduction of design rule for LSI proceeds. Therefore, application of the in-situ particle monitor above wafers to the development of mass-production conditions is notable method to minimize the non-product wafers and to realize short Cycle Time.