AVS 47th International Symposium
    Manufacturing Science and Technology Friday Sessions
       Session MS-FrM

Invited Paper MS-FrM1
Surfaces, Interfaces, and Chemical Reactions in Semiconductor Technology and Manufacturing

Friday, October 6, 2000, 8:20 am, Room 304

Session: Langmuir Award/Ultra Clean Society and Contamination Free Manufacturing
Presenter: G.W. Rubloff, University of Maryland
Correspondent: Click to Email
Atomic-scale properties and chemical reactivity of surfaces and interfaces constitute the science upon which semiconductor technology advances. Since thin film growth, etching, and modification occur as dynamic sequences of surface or interfacial reaction steps, surface reaction phenomena indeed determine the morphology, topography, microstructure, and chemical/physical properties of microelectronic structures, as well as their resulting functionality in devices, circuits, and systems. The surface science community brings an invaluable set of research strategies to understand, control, and advance semiconductor technology, particularly in combining vacuum technology and highly controlled process conditions together with surface, interface, gas phase, and thin film materials characterization. These synergies are proving effective as well in addressing key issues in semiconductor manufacturing.