AVS 47th International Symposium
    MEMS Wednesday Sessions
       Session MM-WeA

Paper MM-WeA9
SiC Surface Micromachining Process Development and Device Characterization

Wednesday, October 4, 2000, 4:40 pm, Room 309

Session: MEMS Processing
Presenter: J.D. Scofield, Air Force Research Laboratory
Authors: J.D. Scofield, Air Force Research Laboratory
B.N. Ganguly, Air Force Research Laboratory
A.J. Steckl, University of Cincinnati
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TA silicon carbide surface micromaching process has been developed for the fabrication of robust MEMS structures. A direct etch and release procedure has been demonstrated using both Silicon dioxide and poly-silicon sacrificial layers. Cubic silicon carbide films were grown and characterized on silicon nitride, silicon dioxide, and poly-Si to determine the most suitable sacrificial layer for device fabrication. Excellent film quality was obtained on all substrates investigated as determined by x-ray diffraction, IR absorption, and mechanical testing. Diagnostic and resonant structures were subsequently fabricated on the poly-Si based sacrificial layer coated substrates and characterized. On chip strain gauge characterization and Raman spectroscopy were both used to empirically determine the residual stresses present in the device structures. Resonance measurements were completed in order to ascertain Young's modulus of the mechanical films. Release of completed MEMS structures is accomplished using both wet and dry (XeF2) etch processes with excellent success realized in both cases. The results of these experiments, and target applications for the fabricated devices will be summarized in the proposed presentation.