AVS 46th International Symposium
    Surface Science Division Tuesday Sessions

Session SS1+EM-TuM
Nitrides and Compound Semiconductors

Tuesday, October 26, 1999, 8:20 am, Room 606
Moderator: A.C. Kummel, University of California, San Diego


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am SS1+EM-TuM1 Invited Paper
Reconstructions and Growth Kinetics of GaN Surfaces with and without Adlayers
R.M. Feenstra, Carnegie Mellon University
9:00am SS1+EM-TuM3
Increase of Electrical Conductivity in p-GaN by Immersion in H@sub2@O@sub2@ Solution*
B. Liu, M.H. Ahonen, P.H. Holloway, University of Florida
9:20am SS1+EM-TuM4
Structure of GaN(0001)-1*1: Holography Study of Mg Adsorption on GaN(0001) Surface
G.J. Lapeyre, S.H. Xu, H. Cruguel, Y. Yang, Montana State University, J.F. Schetzina, North Carolina State University
9:40am SS1+EM-TuM5
Angle Resolved Photoemission Studies of the Surface Electronic Structure of GaN(0001)
K.E. Smith, Y.C. Chao, P. Ryan, J. Downes, C.B. Stagarescu, R. Singh, T.D. Moustakas, Boston University, D. Hanser, R.F. Davis, North Carolina State University
10:00am SS1+EM-TuM6
The Reaction of Oxygen with GaN(0001)
B.D. Thoms, V.J. Bellitto, Y. Yang, Georgia State University, D.D. Koleske, A.E. Wickenden, R.L. Henry, Naval Research Laboratory
10:20am SS1+EM-TuM7
Deep Level Electronic States of Clean GaN (0001)(1x1) Surfaces Prepared by In Decapping
A.P. Young, L. Brillson, Ohio State University, C. Tu, University of California, San Diego
10:40am SS1+EM-TuM8
Characterization of MOCVD ZnO Buffer Layers for CIS Solar Cells
L.C. Olsen, Washington State University, G.J. Exarhos, Pacific Northwest National Laboratory, F.W. Addis, L. Huang, Washington State University
11:00am SS1+EM-TuM9
Photoelectron Diffraction of GaSe Bilayer Grown on Si(111)
S. Meng, B.R. Schroeder, A. Bostwick, University of Washington, E. Rotenberg, Lawrence Berkeley National Laboratory, F.S. Ohuchi, M.A. Olmstead, University of Washington
11:20am SS1+EM-TuM10
An Example of a Compound Semiconductor Surface that Mimics Silicon: The InP (001) (2x1) Reconstruction
L. Li, Q. Fu, B. Han, M. Begarney, D. Law, C. Li, R.F. Hicks, University of California, Los Angeles
11:40am SS1+EM-TuM11
STM Studies of Sulfur Passivated InP(100)
G.P. Lopinski, R.A. Wolkow, National Research Council, Canada, C.D. MacPherson, Nortel Networks, Canada