AVS 46th International Symposium
    Surface Science Division Tuesday Sessions
       Session SS1+EM-TuM

Paper SS1+EM-TuM11
STM Studies of Sulfur Passivated InP(100)

Tuesday, October 26, 1999, 11:40 am, Room 606

Session: Nitrides and Compound Semiconductors
Presenter: G.P. Lopinski, National Research Council, Canada
Authors: G.P. Lopinski, National Research Council, Canada
R.A. Wolkow, National Research Council, Canada
C.D. MacPherson, Nortel Networks, Canada
Correspondent: Click to Email
While sulfur passivation of InP(100) has been extensively studied by a number of techniques the details of the surface structure are still not definitively established. In this work we report STM studies of sulfur passivated InP(001) surfaces, prepared by wet chemical treatment in ammonium sulfide followed by annealing in UHV. Although the as prepared surface is disordered due to the presence of excess sulfur, highly pitted terraces evolve for annealing temperatures above 300C. Further annealing to 450C results in emergence of atomically flat terraces. LEED observations indicate the existence of a (3x1) phase in addition to the previously reported (2x1) structure. Atomically resolved STM images reveal the coexistence of local (3x1) and (2x1) periodicity. These surfaces are found to be stable with respect to brief air exposures.