AVS 46th International Symposium
    Surface Science Division Tuesday Sessions
       Session SS1+EM-TuM

Paper SS1+EM-TuM10
An Example of a Compound Semiconductor Surface that Mimics Silicon: The InP (001) (2x1) Reconstruction

Tuesday, October 26, 1999, 11:20 am, Room 606

Session: Nitrides and Compound Semiconductors
Presenter: L. Li, University of California, Los Angeles
Authors: L. Li, University of California, Los Angeles
Q. Fu, University of California, Los Angeles
B. Han, University of California, Los Angeles
M. Begarney, University of California, Los Angeles
D. Law, University of California, Los Angeles
C. Li, University of California, Los Angeles
R.F. Hicks, University of California, Los Angeles
Correspondent: Click to Email
An InP (001) (2x1) reconstruction was prepared by metalorganic vapor-phase epitaxy. Scanning tunneling micrographs and infrared spectra of adsorbed hydrogen revealed that the (2x1) is terminated with a complete layer of buckled phosphorous dimers, giving rise to p(2x2) and c(4x2) domains. A surface band gap of 1.2 ± 0.2 eV was measured by scanning tunneling spectroscopy. The buckling can be explained by electron correlation among the dangling bonds of pairs of phosphorous dimers. This allows the surface to achieve a lower energy, semiconducting state. This reconstruction mimics the Si (100) (2x1), which is terminated with buckled silicon dimers.