AVS 46th International Symposium
    Plasma Science and Technology Division Wednesday Sessions

Session PS-WeA
Dielectric Etching

Wednesday, October 27, 1999, 2:00 pm, Room 609
Moderator: V.M. Donnelly, Bell Laboratories, Lucent Technologies


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm PS-WeA1 Invited Paper
Dielectric Etching : From Oxide to Low k Dielectrics
P. Berruyer, LETI (CEA-Grenoble), France, O. Joubert, D. Fuard, CNRS-LTM Grenoble, France, C. Verove, ST-Microelectronics, France, M. Assous, LETI (CEA-Grenoble), France, R. Blanc, H. Feldis, ST-Microelectronics, France, E. Tabouret, LETI (CEA-Grenoble), France, Y. Morand, ST-Microelectronics, France
2:40pm PS-WeA3
Surface Kinetics Study of Silicon Dioxide Etching with Fluorocarbons in Inductively-coupled Plasmas
H. Chae, H.H. Sawin, Massachusetts Institute of Technology
3:00pm PS-WeA4
Chemical Bonding Arrangement Approach for Selective Radical Generation in High-density, Low-pressure Fluorocarbon Plasma
S. Samukawa, T. Mukai, NEC Corporation, Japan
3:20pm PS-WeA5
Flux Control for High-Aspect-Ratio Contact Hole Etching
T. Tatsumi, M. Matsui, Y. Hikosaka, M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan
3:40pm PS-WeA6
Etching Chemistry and Kinetics of BCB Low-k Dielectric Films
S.A. Vitale, H.H. Sawin, Massachusetts Institute of Technology
4:00pm PS-WeA7
The Effect of Capacitive Coupling on Inductively Coupled Fluorocarbon Plasma Processing
M. Schaepkens, N.R. Rueger, State University of New York at Albany, J.J. Beulens, ASM International, The Netherlands, I. Martini, E.A. Sanjuan, X. Li, T.E.F.M. Standaert, P.J. Matsuo, G.S. Oehrlein, State University of New York at Albany
4:20pm PS-WeA8
High Density Plasmas Etching of Low Dielectric Constant Materials
D. Fuard, CNRS, France, O. Joubert, L. Vallier, France Telecom-CNET and CNRS
4:40pm PS-WeA9
A Mechanism of Oxide to Nitride Selective RIE
T. Sakai, T. Ohiwa, Toshiba Corporation Semiconductor Company, Japan
5:00pm PS-WeA10
SiON SAC Etching Technique Using C@sub 4@F@sub 8@/CH@sub 2@F@sub 2@/Ar Plasma for 0.18µm Technology and Beyond
J.H. Kim, J.S. Yu, J.S. Na, J.W. Kim, Y.S. Seol, J.C. Ku, C.K. Ryu, S.J. Oh, S.B. Kim, S.D. Kim, I.H. Choi, Hyundai Electronics Industries Co. Ltd., Korea