| AVS 46th International Symposium | |
| Plasma Science and Technology Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-TuM1 Invited Paper Probing Surface Layers during Inductively Coupled Plasma Etching using Laser-Thermal Desorption and Other Optical Techniques I.P. Herman, J.Y. Choe, N.C.M. Fuller, Columbia University, V.M. Donnelly, M.V. Malyshev, K.H.A. Bogart, Bell Laboratories, Lucent Technologies |
| 9:00am | PS-TuM3 Microscopic Uniformity in Oxide Etch during Overetch Time in Polysilicon Gate Etching K. Ono, Kyoto University, Japan, T. Mutumi, Mitsubishi Electric Corporation, Japan |
| 9:20am | PS-TuM4 Vacuum Beam Studies of Photoresist Etching Kinetics F. Greer, J.W. Coburn, D.B. Graves, University of California, Berkeley |
| 9:40am | PS-TuM5 The Relationship of Etch Reaction and Reactive Species Flux in C@sub 4@F@sub 8@/Ar/O@sub 2@ Plasma for SiO@sub 2@ Selective Etching Over Si@sub 3@N@sub 4@ M. Matsui, T. Tatsumi, M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 10:20am | PS-TuM7 Anisotropic Etching of Polymer Films by High Energy (~ 100s of eV) Oxygen Atom Neutral Beams S. Panda, D.J. Economou, University of Houston, L. Chen, Chen Laboratories |
| 10:40am | PS-TuM8 X-ray Photoelectron Analysis of Sidewall Passivation Films formed during Sub 0.1 µm Silicon Gate Etch Processes L. Desvoivres, France Telecom-CNET, L. Vallier, O. Joubert, France Telecom-CNET and CNRS |
| 11:00am | PS-TuM9 Kinetic Roughening of GaAs (001) During Plasma Chemical Etching S.W. Robey, National Institute of Standards and Technology |
| 11:20am | PS-TuM10 Measurements and Modeling of the Absolute Sputtering Yield of Nitrided and Non-nitrided Diffusion/Barrier Film Materials with Incident N+ and Ar+ R. Ranjan, M.H. Hendricks, J.P. Allain, D.N. Ruzic, University of Illinois, Urbana-Champaign |