| AVS 46th International Symposium | |
| Plasma Science and Technology Division | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-FrM1 Invited Paper Plasma Doping for Shallow Junctions S.B. Felch, M.J. Goeckner, Z. Fang, Varian Semiconductor Equipment Associates, G.C.-F. Yeap, D. Bang, M.-R. Lin, AMD Inc. |
| 9:00am | PS-FrM3 Sputter-Wind Heating in Ionized Metal PVD@footnote 1@ J. Lu, M.J. Kushner, University of Illinois, Urbana |
| 9:20am | PS-FrM4 Invited Paper Opportunities and Challenges for Plasma Processes in MEMS Fabrication J.J. Sniegowski, Sandia National Laboratories |
| 10:00am | PS-FrM6 200 mm SCALPEL@super TM@ Mask Dry Etch Development G.R. Bogart, A. Kornblit, Lucent Technologies, I. Johnston, Surface Technology Systems, UK, A.E. Novembre, M.L. Peabody, C.S. Knurek, R.J. Kasica, Lucent Technologies |
| 10:20am | PS-FrM7 High Anisotropy Etching of 0.18 Micron Platinum Electrodes S.D. Athavale, D.E. Kotecki, IBM, Microelectronics Division, H. Shen, Siemens, J. Hwang, C. Ying, D.J. Lee, S. Mak, Applied Materials, Inc. |
| 10:40am | PS-FrM8 Real Time Control of Plasma Tools During Recipe Changes and Transients@footnote 1@ M.J. Kushner, University of Illinois, Urbana, S. Rauf, Motorola Inc. |
| 11:00am | PS-FrM9 Plasma Injection with Small Helicon Sources F.F. Chen, University of California, Los Angeles, X. Jiang, Broadcom, Inc. |
| 11:20am | PS-FrM10 Ultra-Low-Temperature Formation of Silicon Nitride Gate Dielectric Films by Novel Plasma Technique M. Hori, H. Ohta, A. Nagashima, Nagoya University, Japan, M. Ito, Wakayama University, Japan, T. Goto, Nagoya University, Japan |
| 11:40am | PS-FrM11 Characterizations of a Compact, Low-Field Toroidal Plasma Source for Downstream Plasma Processing X. Chen, W.M. Holber, D.K. Smith, Applied Science and Technology, Inc., M.G. Blain, R.L. Jarecki, Sandia National Laboratories |