| AVS 46th International Symposium | |
| Electronic Materials and Processing Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 9:00am | EM2-ThM3 Invited Paper Dielectric Passivation/Oxides on Compound Semiconductors F. Ren, University of Florida, M. Hong, Bell Laboratories, Lucent Technologies, S.J. Pearton, C.R. Abernathy, G. Dang, University of Florida, J.R. Lothian, Multiplex Inc. |
| 10:00am | EM2-ThM6 Study of GaAs Oxidation in H@sub 2@O@sub 2@ and H@sub 2@O using Spectroscopic Ellipsometry S.-J. Cho, P.G. Snyder, University of Nebraska, Lincoln |
| 10:20am | EM2-ThM7 The Effective Two-step Passivation of Metal/GaAs Interface with Sulfur and Hydrogen Plasma M.G. Kang, J.W. Kim, H.H. Park, Yonsei University, Korea |
| 10:40am | EM2-ThM8 Advanced Selective Dry Etching of GaAs/AlGaAs in High Density Inductively Coupled Plasmas J.W. Lee, M.W. Devre, B.H. Reelfs, D.J. Johnson, J.N. Sasserath, Plasma-Therm, Inc., F. Clayton, Motorola, Inc., S.J. Pearton, University of Florida |
| 11:00am | EM2-ThM9 Characterization of Hydrogen Passivation in p-type InP (100) W.E. Henderson, M.D. Williams, Clark Atlanta University |
| 11:20am | EM2-ThM10 Synchrotron Radiation-Induced Wet Processing of GaAs* Q. Ma, D.C. Mancini, R.A. Rosenberg, Argonne National Laboratory |