AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM2-ThM

Invited Paper EM2-ThM3
Dielectric Passivation/Oxides on Compound Semiconductors

Thursday, October 28, 1999, 9:00 am, Room 612

Session: Dielectric Passivation/Oxides on Compound Semiconductors
Presenter: F. Ren, University of Florida
Authors: F. Ren, University of Florida
M. Hong, Bell Laboratories, Lucent Technologies
S.J. Pearton, University of Florida
C.R. Abernathy, University of Florida
G. Dang, University of Florida
J.R. Lothian, Multiplex Inc.
Correspondent: Click to Email
Electronic and optical devices based on GaAs, InGaAs and GaN material systems have been widely used in telecommunication and wireless communication applications. In order to improve the device performance and reliability, device passivation is one of the critical steps in the device fabrication. An electron cyclotron resonance chemical vapor deposition (ECRCVD) silicon nitride (SiN@sub x@) was successfully demonstrated to passivate submicron T-gate. Combining ECRCVD SiN@sub x@ and an in-situ dielectric film passivation technique by dividing a thick film deposition into many thin film (<40Å) depositions and using a N@sub 2@ ion bombardment between the depositions. A thermally stable (up to 800 °C) SiN@sub x@ was achieved with this process. The refractive index of N@sub 2@ treated SiN@sub x@ film only changed 0.3% when the SiN@sub x@ film was heated up to 1000 °C and the film with a continuous deposition showed a 2.5% change. The etch rates of passivated SiN@sub x@ film in BOE and diluted HF are 40 Å/min which is much slower than that of un-treated SiN@sub x@(135 Å/min). Recently, an in-situ deposition of Ga@sub 2@O@sub 3@(Gd@sub 2@O@sub 3@) on InGaAs, GaAs and GaN has been demonstrated. The Ga@sub 2@O@sub 3@(Gd@sub 2@O@sub 3@)/GaAs interfaces showed a very low interface state densities. Enhancement and depletion mode GaAs metal oxide semiconductor field effect transistors (MOSFETs) have been demonstrated with excellent performance. Enhancement mode InGaAs and depletion mode GaN were also demonstrated.