AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM2-ThM

Paper EM2-ThM9
Characterization of Hydrogen Passivation in p-type InP (100)

Thursday, October 28, 1999, 11:00 am, Room 612

Session: Dielectric Passivation/Oxides on Compound Semiconductors
Presenter: W.E. Henderson, Clark Atlanta University
Authors: W.E. Henderson, Clark Atlanta University
M.D. Williams, Clark Atlanta University
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Hydrogen in p-type semiconductors acts to passivate (i.e. neutralize) the charge carrier contribution of impurity charge centers by forming acceptor-H+ complexes. We study the passivation of several common p-type dopants in InP (100) including Zn, Be, and Cd. The InP substrates are exposed to atomic hydrogen created by a radio-frequency generated plasma source. Secondary ion mass spectrometry and capacitance-voltage profiling are used to determine the degree of neutralization as a function of depth. This work is supported by the DoE through grant # DE-FG02-97ER45647.