| AVS 46th International Symposium | |
| Electronic Materials and Processing Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EM-WeP1 Comparison of Plasma Chemistries for Dry Etching of Ta@sub 2@O@sub 5@ K.P. Lee, K.B. Jung, R.K. Singh, S.J. Pearton, University of Florida, C.C. Hobbs, P. Tobin, Motorola |
| EM-WeP2 Study of the Impact of Time-Delay Effect on the Critical Dimension of Tugnsten Silicide/Polysilicon Gate After Reactive Ion Etching S.P. Lin, C.H. Ou, S. Lee, Y.C. Tien, C.F. Hsu, Winbond Electronics Corporation, Taiwan |
| EM-WeP3 Effects of Deposition Temperature of Co Thin Films on (100)Si H.Y. Huang, L.-J. Chen, National Tsing Hua University, Taiwan, R.O.C., W.F. Wu, R.P. Yang, National Nano Device Laboratories, Taiwan, R.O.C., L.Y. Chen, United Microelectronic Corporation, Taiwan, R.O.C. |
| EM-WeP4 Growth of Ultra Thin Oxides of Silicon by Wet Oxidation Technique: Effect of Water Vapor Pressure A. Subrahmanyam, B. Viswanath Krishna, K.N. Bhat, Indian Institute of Technology, India |
| EM-WeP5 Nanoscale Silicon Features Produced by Slow Highly Charged Ions M.W. Newman, A.V. Hamza, H. Lee, A.V. Barnes, T. Schenkel, J.W. McDonald, G.A. Machicoane, T. Niedermayr, D.H. Schnieder, Lawrence Livermore National Laboratory |
| EM-WeP6 Formation of Ni-silicides on (001)Si with a Thin Interposing Pt Layer L.-W. Cheng, S.-L. Cheng, L.-J. Chen, National Tsing Hua University, Taiwan, R.O.C. |
| EM-WeP7 The Interfacial Reaction between Ti and (001)Si with an Interposed Mo Layer S.-M. Chang, L.-J. Chen, National Tsing Hua University, Taiwan, R.O.C. |
| EM-WeP8 Characterizing and Modeling the Electronic Conduction in CrB2-SiC-Si Thin Films F. Wu, Medtronic, Inc. |
| EM-WeP9 Silicon Nano-dots Fabricated on a Si(100) Surface via Thermal Nitridation and Oxygen Etching Reactions J.S. Ha, K.-H. Park, W.S. Yun, ETRI, Republic of Korea |