Characterizing and modeling the electronic conduction in CrB2-SiC-Si thin films The CrB2-SiC-Si material system is used in thin film resistors in very large scale integrated circuits application. The films are sputter deposited onto dielectric substrates from composite target using various reactive gas mixtures. The microstructure of the sputter deposited CrB2-SiC-Si films is characterized by TEM as a distribution of darker ‘island’ regions within an lighter ‘boundary’ medium. In a wide range from 10-3 to 103 ohm -cm, the film resistivity is found as a function of the CrB2, Si and N composition. A model is proposed in this paper and computer simulation is perform to model the film resistivity behavior.