AVS 46th International Symposium | |
Electronic Materials and Processing Division | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | EM-FrM1 Invited Paper Optical Techniques for Real-Time Measurement of Stress and Morphology During Thin Film Growth J.A. Floro, Sandia National Laboratories |
9:00am | EM-FrM3 Insitu Surface Stress Measurements during Contact Reaction of Ultrathin Overlayers of Cobalt on Si(100) and Si(111) J.G. Nivison, D.G. Waters, P.A. Bennett, Arizona State University |
9:20am | EM-FrM4 Vibration Analysis of SiH@sub n@ Bending Modes on Hydrogenated Si(100) Surface Using Infrared Reflection Absorption Spectroscopy H. Noda, T. Urisu, Institute for Molecular Science, Japan, M. Hiramatsu, Meijo University, Japan |
9:40am | EM-FrM5 Assessment of Various Sensors for in-situ Monitoring and Control of MBE K.G. Eyink, Air Force Research Laboratory |
10:00am | EM-FrM6 Integrated Real-time SE, RDS and QMS to Characterize and Optimize OMCVD Growth K.A. Bell, M. Ebert, S.D. Yoo, K. Flock, D.E. Aspnes, North Carolina State University |
10:20am | EM-FrM7 Real-time Thickness and Compositional Control of Ga1-xInxP Growth using P-Polarized Reflectance V. Woods, K. Ito, I. Lauko, N. Dietz, North Carolina State University |
10:40am | EM-FrM8 Migration-Enhanced Epitaxy of CuInSe@sub 2@ B.J. Stanbery, S. Kincal, S. Kim, O.D. Crisalle, T.J. Anderson, University of Florida |
11:00am | EM-FrM9 Boron Nitride Thin Films for High Temperature Multilayer Ceramic Capacitor Chips (MLC3’s) N. Badi, D. Starikov, N. Medelci, I.E. Berishev, A. Bensaoula, University of Houston |
11:20am | EM-FrM10 The Deposition of Polycrystalline Si and SiGe by Ultra-high Vacuum Chemical Vapor Deposition System K.M. Chen, H.J. Huang, National Chiao Tung University, Taiwan, R.O.C., L.P. Chen, G.W. Huang, National Nano Device Laboratory, Taiwan, R.O.C., C.Y. Chang, National Chiao Tung University, Taiwan, R.O.C. |