AVS 46th International Symposium
    Electronic Materials and Processing Division Friday Sessions
       Session EM-FrM

Paper EM-FrM4
Vibration Analysis of SiH@sub n@ Bending Modes on Hydrogenated Si(100) Surface Using Infrared Reflection Absorption Spectroscopy

Friday, October 29, 1999, 9:20 am, Room 608

Session: In Situ Monitoring and Growth
Presenter: H. Noda, Institute for Molecular Science, Japan
Authors: H. Noda, Institute for Molecular Science, Japan
T. Urisu, Institute for Molecular Science, Japan
M. Hiramatsu, Meijo University, Japan
Correspondent: Click to Email
Detailed analyses have been successfully made for the SiH@sub n@ stretching vibration mode on hydrogenated Si(100) surface, which is of great scientific and technological interest.@footnote1@ However, concerning the bending vibration region, which gives important information about SiH@sub 2@ and SiH@sub 3@ species, very little work has been done. Recent developments of buried metal layer infrared reflection absorption spectroscopy (BML-IRRAS) have made the high-resolution vibration analysis of bending region easy. In this work, adsorption and desorption of hydrogen on Si(100) surfaces have been investigated by measuring BML-IRRAS covering a wide spectral range (800-2200 cm@super-1@). In both 3x1 and 1x1 phases observed with reflection high-energy electron diffraction (RHEED), a doublet peak (902 and 913 cm@super -1@) has been clearly observed and assigned to the SiH@sub 2@ scissors mode. The splitting of the peak is most likely due to the frequency difference of SiH@sub 2@ scissors vibration between single SiH@sub 2@ (ordered 3x1 units ; H-Si-Si-H H-Si-H H-Si-Si-H) and neighboring SiH@sub 2@ (disordered 3x1 units ; H-Si-Si-H H-Si-H H-Si-H H-Si-Si-H). Coverage and annealing temperature dependence of this doublet peak have also been investigated. @FootnoteText@ @footnote 1@ Y. J. Chabal and K. Raghavachari, Phys. Rev. Lett. 54 (1985) 1055.