AVS 46th International Symposium
    Electronic Materials and Processing Division Friday Sessions
       Session EM-FrM

Paper EM-FrM3
Insitu Surface Stress Measurements during Contact Reaction of Ultrathin Overlayers of Cobalt on Si(100) and Si(111)

Friday, October 29, 1999, 9:00 am, Room 608

Session: In Situ Monitoring and Growth
Presenter: J.G. Nivison, Arizona State University
Authors: J.G. Nivison, Arizona State University
D.G. Waters, Arizona State University
P.A. Bennett, Arizona State University
Correspondent: Click to Email
We report insitu measurements of surface stress during the contact reaction of 10 Angstrom overlayers of cobalt on Si(111) and Si(100) using an optical deflection wafer curvature technique. The instrument features a feedback stabilized reference beam, which removes thermal drift to first order, allowing temperature dependent measurements. For Si(100), the surface stress during room temperature dosing is +0.2 N/m per Ml (tensile), saturating at 8Ml. Upon annealing, the stress increases monotonically to +0.6 N/m at 200C, which is attributed to a partially coherent CoSi2 overlayer. For Si(111), the stress during room temperature dosing is +0.6 N/m for the first Ml, changing to -4.5 N/m at 5Ml coverage. Upon annealing, the stress increases to +4.0 N/m at 450C, which is attributed to a fully coherent CoSi2 overlayer.