| AVS 46th International Symposium | |
| Applied Surface Science Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | AS-TuM1 Invited Paper Characterization of Shallow Junctions Using Secondary Ion Mass Spectrometry C. Magee, I.M. Abdelrehim, T.H. Buyuklimanli, J.T. Marino, W. Ou, Evans East |
| 9:00am | AS-TuM3 Quantitative Determination of Oxide Layer Thickness and Nitrogen Profiles for Si Gate Oxides O. Brox, Universität Münster, Germany, K. Iltgen, AMD Saxony Manufacturing GmbH, Germany, E. Niehuis, ION-TOF GmbH, Germany, A. Benninghoven, Universität Münster, Germany |
| 9:20am | AS-TuM4 Cesium Depth Profiling of Ultra-Shallow Implants E. Niehuis, T. Grehl, D. Lipinsky, ION-TOF GmbH, Germany, O. Brox, A. Benninghoven, Universität Münster, Germany |
| 9:40am | AS-TuM5 Characterization of Ultra-thin (2-3nm) Oxide Films using Low Energy Cs Ion Beams D.F. Reich, B.W. Schueler, Physical Electronics, J. Bennett, Sematech |
| 10:00am | AS-TuM6 SIMS and XPS Correlation Study of Nitrided Gate Oxide C.A, Bradbury, C. Blackmer, Micron Technology Inc. |
| 10:20am | AS-TuM7 Characterization of the Diffusion Properties of Metallic Elements Implanted into Silicon by SIMS H. Francois-Saint-Cyr, E. Anoshkina, University of Central Florida, F.A. Stevie, Cirent Semiconductor/Lucent Technologies, L. Chow, K. Richardson, D. Zhou, University of Central Florida |
| 10:40am | AS-TuM8 Focused Ion Beam Micromachining of Thin Film Copper J. Phillips, D. Griffis, P.E. Russell, North Carolina State University |
| 11:00am | AS-TuM9 Surface Analysis and Depth Profiles of Self-healing Copper Aluminum Alloys* J.F. Moore, W.S. Calaway, I.V. Veryovkin, M.J. Pellin, Argonne National Laboratory |
| 11:20am | AS-TuM10 Quasi Atomistic Depth Resolution with Auger Depth Profiling for Oxide / Metal Structure M. Menyhard, A. Barna, Zs. Benedek, A. Sulyok, Research Institute for Technical Physics and Materials Science, Hungary |