AVS 46th International Symposium
    Applied Surface Science Division Tuesday Sessions
       Session AS-TuM

Paper AS-TuM7
Characterization of the Diffusion Properties of Metallic Elements Implanted into Silicon by SIMS

Tuesday, October 26, 1999, 10:20 am, Room 6A

Session: Ion Beam Analysis and Depth Profiling
Presenter: H. Francois-Saint-Cyr, University of Central Florida
Authors: H. Francois-Saint-Cyr, University of Central Florida
E. Anoshkina, University of Central Florida
F.A. Stevie, Cirent Semiconductor/Lucent Technologies
L. Chow, University of Central Florida
K. Richardson, University of Central Florida
D. Zhou, University of Central Florida
Correspondent: Click to Email
Metallic elements introduced during device processing degradation or failure of semiconductor devices. Therefore, a better understanding of diffuison phenomena of metallic elements in silicon is useful for quality control and failure analysis. However, the diffusion data of many elements implanted into silicon are not readily available. Because of high sensitivity and excellent depth resolution, secondary ion mass spectrometry (SIMS) is the dominant analytical technique for determining the impurity profiles. When ion implantation, post-heat treatment, and SIMS analysis are combined, the diffusion characteristics of selected metallic elements can be better understood. A systematic investigation of the diffusion of Mg, Cl, K, Ge, Mo, Ca, Ti, V, Cr, and Mn has been carried out employing SIMS. These elements have been initially implanted into silicon wafers as low dose impurities, and then post-heat treatments of the ion-implanted samples have been conducted at different temperatures for a specific time. Following the post-annealing treatments, the depth-profiles of those elements have been obtained by the SIMS analyses. A wide range of diffusion behaviors has been observed for these elements. There possible, quantification of the diffusion process has been achieved based on the differences of the depth-profiles. Furthermore, the diffusion phenomena of different elements are discussed in terms of the activation energy, electronic structures and radii of ions, and their diffusion coefficients.