AVS 46th International Symposium
    Applied Surface Science Division Tuesday Sessions
       Session AS-TuM

Invited Paper AS-TuM1
Characterization of Shallow Junctions Using Secondary Ion Mass Spectrometry

Tuesday, October 26, 1999, 8:20 am, Room 6A

Session: Ion Beam Analysis and Depth Profiling
Presenter: C. Magee, Evans East
Authors: C. Magee, Evans East
I.M. Abdelrehim, Evans East
T.H. Buyuklimanli, Evans East
J.T. Marino, Evans East
W. Ou, Evans East
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As design rules drop below 0.25um, there is a need for developing methodologies to form ultra-shallow junctions for the source and drain extension areas of FETs. Ultra-low energy ion implantation and plasma doping appear to be the leading candidates to form these junctions. However, these techniques need to be followed by some kind of annealing step to activate the dopant. This talk will show how SIMS can be used to characterize the as-implanted distributions for ultra-low energy implants of B, P and As, as well to characterize the degree of dopant diffusion that occurs during annealing. This will be prefaced by a discussion of the problems inherent in SIMS analysis of such shallow structures. These problems arise from atomic mixing from the primary ion beam and surface roughening during the analyses.