| AVS 45th International Symposium | |
| Selected Energy Epitaxy Topical Conference | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SE-WeA1 Invited Paper UHV Arcjet Atomic Nitrogen Source: Beam Characterization and GaN Epitaxial Growth F.J. Grunthaner, R. Bicknell-Tassiuis, P. Deelman, P.J. Grunthaner, Jet Propulsion Laboratory, J. Guilani, Naval Research Laboratory, C.E. Bryson, Surface/Interface, Inc. |
| 2:40pm | SE-WeA3 Flow Characteristics of a UHV Nitrogen Arcjet C.H. Chang, Thermosciences Institute, F.J. Grunthaner, R. Bicknell-Tassiuis, P. Deelman, P.J. Grunthaner, Jet Propulsion Laboratory, J.L. Giuliani, J.P. Apruzese, P. Kepple, Naval Research Laboratory |
| 3:00pm | SE-WeA4 Gas-Phase Diagnostics for Wide Bandgap Semiconductor Development D.G. Fletcher, G.A. Raiche, NASA Ames Research Center |
| 3:20pm | SE-WeA5 Invited Paper Fast Deposition of Amorphous Hydrogenated Silicon and Carbon D.C. Schram, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
| 4:00pm | SE-WeA7 Inexpensive Corona Discharge Source for the Growth of III-N Semiconductors D.C. Jordan, C.T. Burns, R.B. Doak, Arizona State University |
| 4:20pm | SE-WeA8 Development of Atomic Nitrogen Sources and Atomic Nitridation Processes O. Gluschenkov, K. Kim, University of Illinois, Urbana-Champaign |
| 4:40pm | SE-WeA9 Energetic Oxygen Atom Surface Passivation of Cd@sub 1-x@Zn@sub x@Te Radiation Detectors M.A. Hoffbauer, S. Cook, T. Prettyman, J. Rennie, Los Alamos National Laboratory, J.C. Gregory, M.A. George, University of Alabama, Huntsville |
| 5:00pm | SE-WeA10 The Atmospheric-Pressure Plasma Jet: Properties and Materials Applications A. Schütze, University of California, Los Angeles, J. Park, Los Alamos National Laboratory, S.E. Babayan, J.Y. Jeong, V.J. Tu, University of California, Los Angeles, G.S. Selwyn, Los Alamos National Laboratory, R.F. Hicks, University of California, Los Angeles |