AVS 45th International Symposium
    Selected Energy Epitaxy Topical Conference Wednesday Sessions
       Session SE-WeA

Invited Paper SE-WeA5
Fast Deposition of Amorphous Hydrogenated Silicon and Carbon

Wednesday, November 4, 1998, 3:20 pm, Room 327

Session: Novel Sources for Selected Energy Growth
Presenter: D.C. Schram, Eindhoven University of Technology, The Netherlands
Authors: D.C. Schram, Eindhoven University of Technology, The Netherlands
M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands
Correspondent: Click to Email
For solar cell and other developments faster and more efficient deposition of thin layers amorphous hydrogenated materials are necessary. With plasma beam expanding from very efficient thermal plasma sources rates of 10-100 nm/s over a large area has been studied. For a-C:H it proves that the faster the deposition the more dense the material and 100 nm/s has been reached. For a-Si:H good electronic material can be grown with rate of 10 nm/s and elevated substrate temperature (T~350 oC). A picture based on plasma fragmentation processes and surface kinetics will be discussed and illustrated with measurements on mass spectrometry, FTIR and other diagnostics.