| AVS 45th International Symposium | |
| Selected Energy Epitaxy Topical Conference | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SE-ThM1 Invited Paper Low Energy Electron Microscopy of SEED Growth of GaN Layers A. Pavlovska, E. Bauer, I.S.T. Tsong, V.M. Torres, R.B. Doak, Arizona State University |
| 9:00am | SE-ThM3 Invited Paper Observation and Nucleation Control of Ge Growth on Si Surfaces using Scanning Reflection Electron Microscopy M. Ichikawa, Joint Research Center for Atom Technology, Japan |
| 9:40am | SE-ThM5 Invited Paper Wurtzite GaN Surface Structure Studied by Scanning Tunneling Microscopy and Total Energy Calculations A.R. Smith, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, Carnegie Mellon University, J. Neugebauer, Fritz-Haber-Institut der MPG, Germany, J.E. Northrup, Xerox Palo Alto Research Center |
| 10:20am | SE-ThM7 Invited Paper Low-Energy Electron Microscopy of (0001) Surfaces of GaN Films@footnote 1,2@ M.G. Lagally, University of Wisconsin, Madison |
| 11:00am | SE-ThM9 Defect-Driven Nucleation Kinetics of GaN Growth on Sapphire(0001) A.R. Woll, J.D. Brock, R.L. Headrick, S. Kycia, Cornell University |
| 11:20am | SE-ThM10 Invited Paper Site-Selective Reaction of Br@sub 2@ with the Second Layer Ga Atoms on the As-rich GaAs(001)-2x4 Surface Y. Liu, A.J. Komrowski, A.C. Kummel, University of California, San Diego |