AVS 45th International Symposium
    Selected Energy Epitaxy Topical Conference Thursday Sessions
       Session SE-ThM

Invited Paper SE-ThM1
Low Energy Electron Microscopy of SEED Growth of GaN Layers

Thursday, November 5, 1998, 8:20 am, Room 327

Session: In Situ Characterization and Real-Time Diagnostics of Surface Growth Processes
Presenter: E. Bauer, Arizona State University
Authors: A. Pavlovska, Arizona State University
E. Bauer, Arizona State University
I.S.T. Tsong, Arizona State University
V.M. Torres, Arizona State University
R.B. Doak, Arizona State University
Correspondent: Click to Email
The early stages of growth of GaN layers on GaN(0001), 6H-SiC(0001) and on Si(111) surfaces are studied in a low enery electron microscope equipped with a NH@sub 3@ seeded He supersonic jet source, a RF discharge nitrogen source and a thermal NH@sub 3@ beam source. This allows a comparison of the influence of the different substrates and deposition modes on the growth and structure of the layers. Results will be reported on the effects of relative arrival rate of Ga and N containing species, of the substrate temperature and surface condition.