AVS 45th International Symposium | |
Nanometer-scale Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | NS+EM+SS-MoA1 Invited Paper Scanning Tunneling Microscopy Studies of Atomic-Scale Structure In Semiconductor Heterostructures E.T. Yu, S.L. Zuo, University of California, San Diego |
2:40pm | NS+EM+SS-MoA3 Growth Asymmetry in InGaAsP/InAsP Superlattices Studied by Scanning Tunneling Microscopy B. Grandidier, H. Chen, R.M. Feenstra, Carnegie Mellon University, R.S. Goldman, University of Michigan, C. Silfvenius, G. Landgren, Royal Institute of Technology, Sweden |
3:00pm | NS+EM+SS-MoA4 Microstructure of Mixed-Anion Interfaces Examined with XSTM@footnote 1@ J. Harper, M. Weimer, Texas A&M University, D. Zhang, C.H. Lin, S.S. Pei, University of Houston |
3:20pm | NS+EM+SS-MoA5 X-STM Study of InAs/In@sub 1-x@Ga@sub x@Sb/InAs/AlSb Laser Structures@footnote 1@ W. Barvosa-Carter, M.J. Yang, L.J. Whitman, Naval Research Laboratory |
3:40pm | NS+EM+SS-MoA6 Kinetics of Anion Cross Incorporation in Type-II Heterostructures Characterized with XSTM@footnote 1@ J. Steinshnider, J. Harper, M. Weimer, Texas A&M University, D. Zhang, C.H. Lin, S.S. Pei, University of Houston |
4:00pm | NS+EM+SS-MoA7 Low Temperature Cross-Sectional Scanning Tunneling Microscope-Induced Luminescence of GaN S. Evoy, C.K. Harnett, Cornell University, S. Keller, U.K. Mishra, S.P. DenBaars, University of California, Santa Barbara, H.G. Craighead, Cornell University |
4:20pm | NS+EM+SS-MoA8 Cross Sectional STM Study on MBE-grown Si/Ge(111) Interface H. Hirayama, M. Ohmori, K. Takayanagi, Tokyo Institute of Technology, Japan |
4:40pm | NS+EM+SS-MoA9 Scanning Tunneling Microscopy Characterization of the Depletion Zone of a Si Lateral pn Junction M.L. Hildner, R.J. Phaneuf, E.D. Williams, University of Maryland, College Park |