| AVS 45th International Symposium | |
| Manufacturing Science and Technology Group | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | MS-WeM1 Complete Solvent Free Stripping of via Structures using NF@sub 3@,H@sub 2@O,O@sub 2@ Ashing Chemistry W. Au, R. Solis, VLSI Technology, Inc., R. Bersin, H. Xu, M. Boumerzoug, Ulvac Technologies, Inc. |
| 8:40am | MS-WeM2 Studies of a New High Dissociation Inductively-Coupled Plasma Downstream Strip Module W. Collison, T. Ni, B. Berney, Lam Research Corp. |
| 9:00am | MS-WeM3 Invited Paper Lithography for Smaller than 0.15 Micron Silicon Technology A. Ishitani, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 9:40am | MS-WeM5 Evaluation of Chamber Liners, in TCP Metal Etchers, to Reduce the Equipment Clean Time and to Increase the Mean Time between Cleans J. Sappidi, A. Liu, D. Parks, W. Au, S. Smith, VLSI Technology, Inc. |
| 10:00am | MS-WeM6 Evolution Effects of Reactor Inner Wall Surface on Fluorocarbon Plasma Parameters H. Oshio, M. Ogata, T. Ichiki, Y. Horiike, Toyo University, Japan |
| 10:40am | MS-WeM8 Studies of 300MM Poly-Silicon Etch Processes Using A Inductively Coupled Plasma Source T. Ni, W. Collison, Lam Research Corp., K. Takeshita, Lam Research Corp., Japan |
| 11:00am | MS-WeM9 Integrating Process Models and Operational Methods J.W. Herrmann, N. Chandrasekaran, R.Z. Shi, B.F. Conaghan, G.W. Rubloff, University of Maryland |
| 11:20am | MS-WeM10 Application of an Inductively-Coupled Plasma Source to Destruction and Abatement of Fluorine-based Gases L.J. Mahoney, D.C. Carter, M.S. Amann, G.A. Roche, Advanced Energy Industries |
| 11:40am | MS-WeM11 Low Dielectric Polymer Etching with a Downstream Microwave Plasma R.R.A. Callahan, G.B. Raupp, S.P. Beaudoin, Arizona State University |