AVS 45th International Symposium
    Manufacturing Science and Technology Group Wednesday Sessions
       Session MS-WeM

Paper MS-WeM2
Studies of a New High Dissociation Inductively-Coupled Plasma Downstream Strip Module

Wednesday, November 4, 1998, 8:40 am, Room 317

Session: Advanced Process Equipment and ES&H
Presenter: W. Collison, Lam Research Corp.
Authors: W. Collison, Lam Research Corp.
T. Ni, Lam Research Corp.
B. Berney, Lam Research Corp.
Correspondent: Click to Email
A new inductively-coupled high dissociation plasma downstream strip source (HD@super 2@ source) was developed to meet advanced market requirements for 200mm and 300mm photoresist stripping processes. Plasma simulations were used to study the dissociation percentage of O@sub 2@ gas for different chamber designs. It shows that this source can provide higher than 20% O@sub 2@ dissociation for 1500 watts power at 1 Torr. Fluid modeling was used to design the gas-redistribution plate to optimize ashing uniformity. Detailed process results will be presented and discussed. It is shown that adding 5-10% N@sub 2@ gas can increase photoresist etch rate 2-3 times. CHARM wafer tests have demonstrated no charging or UV damage. RF bias on the bottom electrode provides added capability to remove residues and enhance etch rate. A comparison of HD@super 2@ source and microwave source will also be discussed.