| AVS 45th International Symposium | |
| Electronic Materials and Processing Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM+PS+SE-TuA1 Thermally Induced Improvements on SiN@sub x@:H/InP Devices E. Redondo, N. Blanco, I. Mártil, G. González Díaz, Universidad Complutense de Madrid, Spain, R. Peláez, S. Dueñas, H. Castán, Universidad de Valladolid, Spain |
| 2:20pm | EM+PS+SE-TuA2 Damage to III-V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition F. Ren, University of Florida, Gainesville, J.W. Lee, D. Johnson, K. McKenzie, Plasma-Therm, Inc., T. Maeda, C.R. Abernathy, Y-.B. Hahn, S.J. Pearton, University of Florida, Gainesville, R.J. Shul, Sandia National Laboratories |
| 2:40pm | EM+PS+SE-TuA3 Anisotropic Etching of InP using CAIBE (Cl@sub 2@/Ar): Importance of the Sample Temperature Stability and the Reactive Gas Distribution B. Lamontagne, M. Gagnon, J. Stapledon, P. Chow-Chong, M. Davies, National Research Council, Canada |
| 3:00pm | EM+PS+SE-TuA4 Invited Paper Hydrogen in Compound Semiconductors M.D. McCluskey, N.M. Johnson, Xerox Palo Alto Research Center |
| 3:40pm | EM+PS+SE-TuA6 The Interaction of Electrons with Hydrogenated GaN(0001) V.J. Bellitto, B.D. Thoms, Georgia State University, D.D. Koleske, Naval Research Laboratory |
| 4:00pm | EM+PS+SE-TuA7 III-V Surface Plasma Nitridation: A Challenge for III-Nitride Epigrowth G. Bruno, M. Losurdo, P. Capezzuto, MITER-CNR, Italy, E.A. Irene, University of North Carolina, Chapel Hill |
| 4:20pm | EM+PS+SE-TuA8 III-Nitride Dry Etching - Comparison of Inductively Coupled Plasma Chemistries H. Cho, Y-.B. Hahn, D.C. Hays, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, S.J. Pearton, University of Florida, Gainesville, J. Han, R.J. Shul, Sandia National Laboratories |
| 4:40pm | EM+PS+SE-TuA9 Photoenhanced RIE of III-V Nitrides in BCl@sub 3@/Cl@sub 2@/Ar/N@sub 2@ Plasmas A. Tempez, N. Medelci, N. Badi, I. Berichev, D. Starikov, A. Bensaoula, University of Houston, A. Chourasia, Texas A&M University |
| 5:00pm | EM+PS+SE-TuA10 Characteristics of Cl@sub 2@ -based Inductively Coupled Plasmas during the GaN Etching H.S. Kim, J.W. Jang, Y.H. Lee, G.Y. Yeom, Sungkyunkwan University, Korea, J.W. Lee, T.I. Kim, Samsung Advanced Institute of Technology, Korea |