AVS 45th International Symposium
    Electronic Materials and Processing Division Tuesday Sessions
       Session EM+PS+SE-TuA

Paper EM+PS+SE-TuA2
Damage to III-V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition

Tuesday, November 3, 1998, 2:20 pm, Room 316

Session: Plasma Processing of Compound Semiconductors
Presenter: F. Ren, University of Florida, Gainesville
Authors: F. Ren, University of Florida, Gainesville
J.W. Lee, Plasma-Therm, Inc.
D. Johnson, Plasma-Therm, Inc.
K. McKenzie, Plasma-Therm, Inc.
T. Maeda, University of Florida, Gainesville
C.R. Abernathy, University of Florida, Gainesville
Y-.B. Hahn, University of Florida, Gainesville
S.J. Pearton, University of Florida, Gainesville
R.J. Shul, Sandia National Laboratories
Correspondent: Click to Email
GaAs-based metal semiconductor field effect transistors (MESFETs), heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) have been exposed to ECR SiH@sub 4@/N@sub 2@, SiH@sub 4@/N@sub 2@O and SiH@sub 4@/NH@sub 3@ discharges for deposition of SiN@sub x@ or SiO@sub 2@ passivating layers. The effect of source power, rf chuck power, pressure and plasma composition have been investigated. Effects due to both ion damage and hydrogenation of dopants are observed. For both HEMTs and MESFETs there are no conditions where substantial increases in channel sheet resistivity are not observed, due primarily to (Si-H)@super o@ complex formation. In HBTs the carbon-doped base layer is the most susceptible layer to hydrogenation. Ion damage in all three devices is minimized at low rf chuck power, moderate ECR source power and high deposition rates.