AVS 45th International Symposium
    Electronic Materials and Processing Division Tuesday Sessions
       Session EM+PS+SE-TuA

Paper EM+PS+SE-TuA1
Thermally Induced Improvements on SiN@sub x@:H/InP Devices

Tuesday, November 3, 1998, 2:00 pm, Room 316

Session: Plasma Processing of Compound Semiconductors
Presenter: E. Redondo, Universidad Complutense de Madrid, Spain
Authors: E. Redondo, Universidad Complutense de Madrid, Spain
N. Blanco, Universidad Complutense de Madrid, Spain
I. Mártil, Universidad Complutense de Madrid, Spain
G. González Díaz, Universidad Complutense de Madrid, Spain
R. Peláez, Universidad de Valladolid, Spain
S. Dueñas, Universidad de Valladolid, Spain
H. Castán, Universidad de Valladolid, Spain
Correspondent: Click to Email
The electron cyclotron resonance (ECR) plasma technique has been recently proved to be optimum as insulator deposition method in Al/SiN@sub x@:H/InP devices.@footnote 1@ In this communication we present a study of the influence of rapid thermal annealing (RTA) treatments on the interface characteristics of Al/SiN@sub x@:H/InP devices. The insulator was obtained by the ECR plasma method at 200°C-deposition temperature. The films were deposited in two steps: we deposited first a film with x=1.55 and then another with x=1.43. Total film thickness was 500Å in one set of samples and 200Å in other. RTAs were conducted in Ar atmosphere during 30s in a temperature range between 400 and 800°C. The electrical characteristics of the devices have been obtained by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. Those films annealed between 400 and 500°C/30s in Ar atmosphere give structures with the minimum interfacial trap density. The interface trap density behavior with the annealing temperature has been observed to show the same trend with both CV and DLTS measurements, reaching lower values in the latest ones. The minimum interfacial trap density value achieved with the best annealing is of 3x10@super 11@ cm@super -2@ eV@super -1@, obtained for 400°C/30s annealing on the thinnest structure (200Å). Besides, DLTS measurements show the presence of features in the spectrum that are characteristic of phosphorus vacancies, V@sub p@, and deep centers. The annealing at 400°C/30s reduces the V@sub p@ content. This suggests that the nitrogen from the insulator is filling these vacancies so InP surface is being passivated. @FootnoteText@ @footnote 1@ S.García, I.Mártil, G.González Díaz, E.Castán, S.Dueñas, M.Fernandez. J.Appl.Phys, 83 (1), 1998, pp 600-603.