| AVS 45th International Symposium | |
| Applied Surface Science Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | AS-ThA1 Sputtering Rate Change and Surface Roughening in SIMS Measurements Using Oblique and Normal Incidence Oxygen Bombardment, With and Without Oxygen Flooding C.W. Magee, Evans East, S.P. Smith, G.R. Mount, Charles Evans and Associates, H.-J. Gossmann, B. Herner, Bell Laboratories, Lucent Technologies |
| 2:20pm | AS-ThA2 Secondary Ion Mass Spectrometry of Deep Trench Capacitors in Dynamic Random Access Memory C.C. Parks, IBM Analytical Services, H. Glawischnig, Siemens AG, Germany, M. Levy, IBM Burlington, Chr. Dieseldorff, Siemens at International Sematech |
| 2:40pm | AS-ThA3 Invited Paper TOF-SIMS Depth Profiling of Novel Si Devices J.G.M. van Berkum, P.C. Zalm, Philips CFT - Materials Analysis, The Netherlands |
| 3:40pm | AS-ThA6 Nitrogen Incorporation and Trace Element Analysis of Nanocrystalline Diamond Thin Films by SIMS D. Zhou, University of Central Florida, F.A. Stevie, J. Mckinley, Cirent Semiconductor, H. Gnaser, University of Kaiserslautern, Germany |
| 4:00pm | AS-ThA7 Invited Paper Quantitative ToF-SIMS Analysis of Industrial Polymers A.A. Galuska, D.W. Abmayr, Exxon Chemical Co. |
| 4:40pm | AS-ThA9 Secondary Ion Emission from Molecular Surfaces and Overlayers under Noble Gas and Molecular Primary Ion Bombardment D. Stapel, A. Benninghoven, Universität Münster, Germany |
| 5:00pm | AS-ThA10 Coincidence Counting in Highly Charged Ion Based Time-of-Flight Secondary Ion Mass Spectrometry A.V. Hamza, T. Schenkel, A.V. Barnes, D.H. Schneider, Lawrence Livermore National Laboratory |