AVS 45th International Symposium
    Applied Surface Science Division Thursday Sessions
       Session AS-ThA

Paper AS-ThA2
Secondary Ion Mass Spectrometry of Deep Trench Capacitors in Dynamic Random Access Memory

Thursday, November 5, 1998, 2:20 pm, Room 307

Session: SIMS - Depth Profiling and Molecular Surface Analysis
Presenter: C.C. Parks, IBM Analytical Services
Authors: C.C. Parks, IBM Analytical Services
H. Glawischnig, Siemens AG, Germany
M. Levy, IBM Burlington
Chr. Dieseldorff, Siemens at International Sematech
Correspondent: Click to Email
Secondary Ion Mass Spectrometry (SIMS) supported the development of deep trench capacitors in Dynamic Random Access Memory (DRAM). SIMS is done efficiently by analyzing thousands of cells in parallel and the approach described in this paper is scalable to the multi-Gbit generation. By projecting out fundamental values using geometrical formalisms, the behavior of contaminants and dopants in sub-micrometer geometries is understood without the need for small-area measurements. Contamination aspects are addressed: quantifying and partitioning of halogen, alkali, and transition-metal residues among deep trench and other processing sectors. The deposition of self-limiting layers of arsenic during polysilicon fill of the deep trench is explored in detail. The doping of the trench side-walls, either through angle ion implants or by drive-in of doped-glass deposition, is quantified.