AVS 45th International Symposium
    Plasma Science and Technology Division Monday Sessions
       Session PS2-MoA

Paper PS2-MoA5
Diode Laser Measurements of CF@sub x@ and CO Radicals in an Inductively Coupled GEC Reference Cell

Monday, November 2, 1998, 3:20 pm, Room 318/319/320

Session: Diagnostics I
Presenter: W.L. Perry, University of New Mexico
Authors: G.P. Deering, University of New Mexico
W.L. Perry, University of New Mexico
H.M. Anderson, University of New Mexico
Correspondent: Click to Email
Diode laser absorption measurements have been made on CF, CF@sub 2@ and CO radicals in an inductively coupled GEC reference cell. The GEC reference cell was modified with a quartz confinement ring around the source region to stabilize the plasma. Optical emission and Langmuir probe studies indicated this modification resulted in fluorocarbon discharges with a plasma chemistry similar to that found in commercial etch tools. The experiments in this study focused on radical concentrations found in the reactor under typical high density plasma etching conditions. At 300 W source power, 100 W bias power and 10 mTorr C@sub 2@F@sub 6@ pressure in the GEC cell, etching proceeded at about 5000 A/min. A range of source power and bias power conditions, from 100 to 400 W and from 0 to 130 W, respectively, was employed. The time evolution of CF, CF@sub 2@ and CO in a C@sub 2@F@sub 6@ plasma was monitored during an approximate 2 minute etch cycle. Chamber cleanliness and bias was found to exert a strong influence on radical densities. The data is expected to provide an important database for models of oxide etching in inductively coupled plasma tools. This project was funded by SEMATECH.